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| Item Name | Microcircuit Memory |
| INC Code | 41015 |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5962 Microcircuits Electronic |
| National Item Identification Number (NIIN) | 01-370-8088 (013708088) |
| NCB Code | USA (01) |
| Part Number | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| PDM41024L55CB | paradigm technology inc | microcircuit memory | Avl | RFQ |
| MT5C1008CW-55-883C | micron industries corporation | microcircuit memory | Avl | RFQ |
| MSM8128SLMC-55 | mosaic semiconductor inc | microcircuit memory | Avl | RFQ |
| EDI88130LPX55CB | white electronic designs corpora | microcircuit memory | Avl | RFQ |
| 77092290 | alcatel telspace unite electronique | microcircuit memory | Avl | RFQ |
| 77092290 | alcatel lucent | microcircuit memory | Avl | RFQ |
| 5962-8959817MXX | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8959817MXB | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8959817MXA | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-89598 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 10138279 | nimikkeistokeskus ncb finland | microcircuit memory | Avl | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAT | BODY WIDTH0 580 INCHES MINIMUM AND 0 605 INCHES MAXIMUM |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | ADAQ | BODY LENGTH1 580 INCHES MINIMUM AND 1 700 INCHES MAXIMUM |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS NOMINAL ACCESS |
| MEMORY | ADAU | BODY HEIGHT0 129 INCHES MINIMUM AND 0 230 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | CBBL | FEATURES PROVIDEDMONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER AND BURN IN MIL-STD-883 CLASS B |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC OR GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITMEMORYDIGITALCMOS 128K X 8 STATIC RANDOM ACESS MEMORYSCRAM LOW POWERMONOLITHIC SILICON |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | CZES | HYBRID TECHNOLOGY TYPEMONOLITHIC |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA67268-5962-89598 GOVERNMENT STANDARD |
| MEMORY | ZZZT | NONDEFINITIVE SPECSTD DATA01 TYPE AND M CLASS AND X CASE AND A FINISH |
| Relevant Components for NSN - 5962-01-370-8088, 5962013708088 | ||||
| 5935-01-278-3059 (5935012783059) | 5905-01-256-1503 (5905012561503) | 5935-01-525-7175 (5935015257175) | 5999-01-504-0324 (5999015040324) | |
| 5965-01-684-1554 (5965016841554) | 5962-01-435-1333 (5962014351333) | 5925-00-103-5151 (5925001035151) | 5945-00-333-1053 (5945003331053) | |
| 5995-01-117-0077 (5995011170077) | 5950-01-127-7165 (5950011277165) | 5925-00-449-3777 (5925004493777) | 5930-01-299-2711 (5930012992711) | |
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Guaranteed on-time |
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Customized and |
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Over 5100 |
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Complete Purchasing |
